Part Number Hot Search : 
I74FCT FAN7024 RTL8201 J100A GSD965 MJ15003 KD607 OT410D
Product Description
Full Text Search
 

To Download H5N5006LMTL-E Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1115-0100 (Previous: ADE-208-1549) Rev.1.00 Apr 07, 2006
Features
* * * * * Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
4
1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1
2
1
3
2
3
H5N5006LD
H5N5006LS
D
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4
G
1
2
3
S
H5N5006LM
Rev.1.00 Apr 07, 2006 page 1 of 7
H5N5006LD, H5N5006LS, H5N5006LM
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Ratings 500 30 3.5 14 3.5 3.5 50 2.5 150 -55 to +150
Unit V V A A A A W C/W C C
IAP Note 2 Pch ch-c Tch Tstg
Note 3
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body to drain diode forward voltage Body to drain diode reverse recovery time Body to drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 500 -- -- 3.0 -- 1.8 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 2.5 3.0 365 35 8 20 13 48 14 14 2 8 0.85 280 0.8 Max -- 0.1 1 4.5 3.0 -- -- -- -- -- -- -- -- -- -- -- 1.3 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions ID = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1.75 A, VGS = 10 V Note 4 ID = 1.75 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz VDD 250 V, ID = 1.75 A RL = 143 VGS = 10 V Rg = 10 VDD = 400 V VGS = 10 V ID = 3.5 A IF = 3.5 A, VGS = 0 IF = 3.5 A, VGS = 0 diF/dt = 100 A/s
Note 4
Rev.1.00 Apr 07, 2006 page 2 of 7
H5N5006LD, H5N5006LS, H5N5006LM
Main Characteristics
Power vs. Temperature Derating
80 50
Maximum Safe Operation Area
Pch (W)
(A)
10
10
10
0 s
s
n s m tio 1 ra pe C O 5 C2 D c= T
60
PW = 10 ms (1shot)
Channel Dissipation
ID
40
Drain Current
1
0.1
20
Operation in this area is limited by RDS (on)
0
0
50
100
150
200
0.01 Ta = 25C 0.005 0.1 0.3 1
3
10
30 100 300 1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
5 Pulse Test 8V 10 V 5
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
4 6V 3
ID (A) Drain Current
4
3 5.5 V
Drain Current
2
2 Tc = 75C 25C 1 -25C
1
5V VGS = 4.5 V
0 0 4 8 12 16 20
0 0 2 4 6 8 10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Pulse Test 16
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) ()
Drain to Source Saturation Voltage VDS(on) (V)
20
10 5 Pulse Test VGS = 10 V, 15 V
12 ID = 3 A 8 2A 4 1A
2 1 0.5
0.2 0.1 0.1
0 0 4 8 12 16 20
0.2
0.5
1
2
5
10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.1.00 Apr 07, 2006 page 3 of 7
H5N5006LD, H5N5006LS, H5N5006LM
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance |yfs| (S)
10 Pulse Test VGS = 10 V 8 ID = 3 A 6
10 5 Tc = -25C 2 1 0.5 75C 25C
4 2A 2 1A
0.2 0.1 0.1
VDS = 10 V Pulse Test 0.2 0.5 1 2 5 10
0 -40
0
40
80
120
160
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
1000 500 Ciss
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500
Capacitance C (pF)
200 100 50 20 10 5 2 1 VGS = 0 f = 1 MHz 0 50 100 150 200 250 Crss Coss
200 100 50
20 10 0.1
di / dt = 100 A / s VGS = 0, Ta = 25C 0.2 0.5 1 2 5 10
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
(V)
ID = 3.5 A 800
VGS 16 VDD = 100 V 250 V 400 V
VGS (V)
1000
20
1000 300 tf 100 30 10 3 1 0.1 0.2 td(on) tr VGS = 10 V, VDD = 250 V RW = 5 s, duty 1 % Rg = 10 0.5 1 2 5 10 20 td(off)
VDS
Drain to Source Voltage
600 VDS 400
12
8
200
0 0 8
VDD = 400 V 250 V 100 V 16 24 32 40
4
0
Gate Charge
Qg (nc)
Gate to Source Voltage
Switching Time t (ns)
Drain Current
ID (A)
Rev.1.00 Apr 07, 2006 page 4 of 7
H5N5006LD, H5N5006LS, H5N5006LM
Reverse Drain Current vs. Souece to Drain Voltage
5 5
Gate to Source Cutoff Voltage vs. Case Temperature
Gate to Source Cutoff Voltage VGS (off) (V)
Reverse Drain Current IDR (A)
ID = 10 mA 4
4
3
3
1 mA 0.1 mA
2 VGS = 0 5 V, 10 V 1 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0
2
1 VDS = 10 V 0 -50 0 50 100 150 200
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1
D=1 0.5
0.3
0.2
0.1
0.1
ch - c (t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C PDM
t ho pu lse
0.05
0.03
0.02
D=
PW T
PW T
0.0
1
1s
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor 10 D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDD = 250 V td(on)
90% tr
90% td(off) tf
Rev.1.00 Apr 07, 2006 page 5 of 7
H5N5006LD, H5N5006LS, H5N5006LM
Package Dimensions
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
Package Name LDPAK(S)-(1)
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Rev.1.00 Apr 07, 2006 page 6 of 7
1.7
1.3 0.15
7.8 6.6
H5N5006LD, H5N5006LS, H5N5006LM
Package Name LDPAK(S)-(2) JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
2.49 0.2
10.0
(1.5)
(2.3)
0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5 0.4 0.1
0.3 5.0 + 0.5 -
0.2 0.86 + 0.1 -
2.54 0.5
Ordering Information
Part Name H5N5006LD-E H5N5006LSTL-E H5N5006LMTL-E 500 pcs 1000 pcs 1000 pcs Quantity Shipping Container Box (Conductive Sack) Taping Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.1.00 Apr 07, 2006 page 7 of 7
1.7
1.3 0.15
7.8 6.6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0


▲Up To Search▲   

 
Price & Availability of H5N5006LMTL-E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X